Hanlin Tang, Graduate Student
h.tang@yale.edu
Quantum transducers that convert microwave photons into optical photons are important components of quantum networks. High efficiency quantum transducers require transduction medium have strong optical and microwave light coupling, as well as low noise operating environment. Yb3+: YVO4 emerges as competitive candidate for transduction application. Previous research on bulk Yb3+: YVO4 shows that the current limit on the transduction efficiency is the re-absorption of the outgoing optical signal by the host crystal [1]. The re-absorption effect can be reduced by controlling the thickness of the host crystal. The optimal thickness of YVO4 is ∼ 1μm by theoretical calculation, which cannot be achieved in bulk crystals. An alternative approach is to grow YVO4 thin films as the host.
In this talk, we will discuss the methods growing YVO4 thin films on YVO4 substrates and sapphire substrates using Molecular Beam Epitaxy. The surface quality has been significantly improved in homoepitaxial thin films compared to bare substrates. For heteroepitaxial growth on sapphire substrates. We discovered interface strain-controlled Zircon-Scheelite phase transition of YVO4 thin films by introducing a buffer oxide layer. To study the domain structures of YVO4 thin films grown on sapphire substrates, we also did plane-view 4D STEM and obtained the 2D mapping of the domain distribution, which is consistent with what we observed in AFM and RHEED.